115V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.\n\n •0.4mm Profile—Ideal for Low Profile Applications\n•100% Unclamped Inductive Switching (UIS) Test in Production—Ensures More Reliable and Robust End Application\n•Halogen and Antimony Free. “Green” Device (Note 3)\n;

Diodes

美台半导体

650V N-Channel Power MOSFET

Features RDS(ON)

文件：2.22075 Mbytes 页数：8 Pages

SY

顺烨电子

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET BVDSS: 101V~250V POWERDI5

PAM

龙鼎微

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET BVDSS: 101V~250V POWERDI5

PAM

龙鼎微