丝印：DMT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：T89；Package：V-DFN3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.  Backlighting  Power Management Functions  DC

文件：505.41 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T89；Package：V-DFN3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.  Backlighting  Power Management Functions  DC

文件：505.41 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T09；Package：PowerDI3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications • Synchronous Rectifier • Backlighting • Power Management Functions • DC-DC Con

文件：481.66 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T09；Package：PowerDI3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications • Synchronous Rectifier • Backlighting • Power Management Functions • DC-DC Con

文件：481.66 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T10H09LS；Package：SO-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  High Frequency Switching  Synchronous Rectification  DC-DC Converters Feat

文件：466.99 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T10H09SS；Package：SO-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits • High Conversion Efficiency • Low RDS(ON)—Minimizes On-State Losses • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET

文件：364.3 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T1010LSQ；Package：SO-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Backlighting Power management functions DC-DC converters Features and Benefits  100 Unclamped Induc

文件：581.53 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T1H025L；Package：TO252；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications  Power Management Functions  DC-DC Converters  Backlighting Features  100 Unclamped Inductive Switching – Ensures M

文件：488.79 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：32；Package：U-DFN2020-6；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

文件：469.92 Kbytes 页数：7 Pages

DIODES

美台半导体