ESD HBM Protected up to 1KV

文件：431.91 Kbytes 页数：6 Pages

DIODES

美台半导体

20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰

文件：437.56 Kbytes 页数：6 Pages

DIODES

美台半导体

ESD HBM Protected up to 1KV

文件：431.91 Kbytes 页数：6 Pages

DIODES

美台半导体

20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰

文件：437.56 Kbytes 页数：6 Pages

DIODES

美台半导体

20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰

文件：437.56 Kbytes 页数：6 Pages

DIODES

美台半导体

ESD HBM Protected up to 1KV

文件：431.91 Kbytes 页数：6 Pages

DIODES

美台半导体

20V P-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance\n\n\t(RDS(ON)) and yet maintain superior switching performance, making it\n\n\tideal for high efficiency power management applications. Low RDS(ON) – ensures on state losses are minimized\n\t\n\t\tSmall form factor thermally efficient package enables higher density end products\n\t\n\t\tOccupies just 33% of the board area occupied by SO-8 enabling smaller end product\n\t\n\t\tESD HBM Protected up to 1KV\n\t\n\t\tTotally Lead-Fre;

Diodes

美台半导体