首页 >DMP2004DWK-7MOS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltageVGS(th)1V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ComplementaryPairMOSFET •Ultra-SmallSurfaceMountPackage •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes2&am | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •LoadSwitch Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGate | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUALP-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualP-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltageVGS(TH) | DIODESDiodes Incorporated 美台半导体 | DIODES |
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