60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Backlighting Power management functions DC-DC converters Features and Benefits  Rated to +175°C –

文件：752.87 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：N6035SDW；Package：PowerDI5060-8；60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Backlighting Power management functions DC-DC converters Features and Benefits  Rated to +175°C –

文件：752.87 Kbytes 页数：7 Pages

DIODES

美台半导体

60V +175?C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •Rated to +175°C – Ideal for High Ambient Temperature Environments\n•100% Unclamped Inductive Switch (UIS) Test in Production\n•Low RDS(ON) – Minimizes On State Losses\n•Low Input Capacitance\n•Wettable Flank for Improved Optical Inspections;

Diodes

美台半导体

60V +175?C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP. •Rated to +175°C – Ideal for High Ambient Temperature Environments\n•100% Unclamped Inductive Switch (UIS) Test in Production\n•Low RDS(ON) – Minimizes On State Losses\n•Low Input Capacitance\n•Wettable Flank for Improved Optical Inspections;

Diodes

美台半导体