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DMN3110LCP3中文资料N-CHANNEL ENHANCEMENT MODE MOSFET数据手册Diodes规格书
DMN3110LCP3规格书详情
描述 Description
This new generation MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small signals MOSFET with as really small footprint.
特性 Features
Low QG & QGD
Small Footprint
Low Profile 0.30mm Height
应用 Application
Battery Management
Load Switch
Battery Protection
Handheld and Mobile Application
技术参数
- 制造商编号
:DMN3110LCP3
- 生产厂家
:Diodes
- Automotive Compliant PPAP
:No
- Polarity
:N
- ESD Diodes
:Yes
- VDS
:30 V
- VGS
:12 ±V
- IDS @ TA = +25°C
:32 A
- PD @ TA = +25°C
:1.38 W
- RDS(ON) Max @ VGS (10V)
:N/A mΩ
- RDS(ON) Max @ VGS (4.5V)
:80 mΩ
- RDS(ON) Max @ VGS (2.5V)
:110 mΩ
- RDS(ON) Max @ VGS (1.8V)
:160 mΩ
- VGS (th) Max
:1.1 V
- QG Typ @ VGS = 4.5V (nC)
:1.09 nC
- QG Typ @ VGS = 10V (nC)
:N/A nC
- Packages
:X2-DSN1006-3
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
DIODES/美台 |
24+ |
NA/ |
38880 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
DIODES/美台 |
21+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
DIODES/美台 |
21+ |
X2-DSN1006-3 |
8080 |
只做原装,质量保证 |
询价 | ||
DIODES |
21+ |
DSN10 |
78000 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
询价 | ||
DIODES/美台 |
24+ |
DSN10 |
28235 |
郑重承诺只做原装进口现货 |
询价 | ||
DIODES/美台 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
Diodes |
22+ |
3XFDFN |
9000 |
原厂渠道,现货配单 |
询价 | ||
DIODES美台 |
23+ |
X2-DSN1006-3 |
22820 |
原装正品,支持实单 |
询价 | ||
DIODES/美台 |
2447 |
SOT26 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |