DMN26D0UFB4中文资料美台半导体数据手册PDF规格书

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Features and Benefits

• N-Channel MOSFET

• Low On-Resistance

• Very Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package, 0.4mm Maximum Package

Height

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• For automotive applications requiring specific change control

(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and

manufactured in IATF 16949 certified facilities), please refer

to the related automotive grade (Q-suffix) part. A listing can

be found at

https://www.diodes.com/products/automotive/automotive-products/.

• This part is qualified to JEDEC standards (as references in

AEC-Q) for High Reliability.

https://www.diodes.com/quality/product-definitions/

Applications

• DC-DC Converters

• Power Management Functions