首页 >DMN2004MK>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •Ultra-SmallSurfaceMountPackage •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”D | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedupto2KV •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qu | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-ChannelEnhancementModeMOSFET | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
N-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUALP-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUALP-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualP-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltageVGS(TH) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
P-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •VeryLowGateThresholdVoltageVGS(TH) | DIODESDiodes Incorporated 美台半导体 | DIODES |
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