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GS1009FL

1.0ASURFACEMOUNTGLASSPASSIVATEDDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

HAF1009

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF1009L

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF1009S

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HPR1009

1.0WATTUNREGULATEDSIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola

CANDD

C&D Technologies

HPR1009

1.0WATTUNREGULATEDSIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola

CANDD

C&D Technologies

HPR1009C

1.0WATTUNREGULATED,SIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXCSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXCSerieswithhighfrequencyiso

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

IPT-1009

ICReferenceDesignTransformers

ICE

ice Components, Ins.

IS-1009EH

RadiationHardened2.5VReference

Features •ElectricallyscreenedtoSMD#5962-00523 •QMLqualifiedperMIL-PRF-38535requirements •EHversionacceptancetestedto50krad(Si)(LDR) •Radiationenvironment-IS-1009EH -Highdoserate(50-300rad(Si)/s)...........300krad(Si) -Lowdoserate(0.01rad(Si)/s)...

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

IS-1009RH

RadiationHardened2.5VReference

Intersil

Intersil Corporation

详细参数

  • 型号:

    DMD1009-A

  • 制造商:

    SEME-LAB

  • 制造商全称:

    Seme LAB

  • 功能描述:

    ROHS COMPLIANT METAL GATE RF SILICON FET

供应商型号品牌批号封装库存备注价格
SEMELAB
24+
250
现货供应
询价
SEMELAB
23+
TO-59
8510
原装正品代理渠道价格优势
询价
SEMELAB
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SEMELAB
361
询价
IEE
5
全新原装 货期两周
询价
IEE
2022+
1
全新原装 货期两周
询价
MNBTCoLtd
2010+
PCB
1393
普通
询价
MNBTCOLTD
2023+
8700
原装现货
询价
2015
模块
300
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
询价
更多DMD1009-A供应商 更新时间2025-5-20 16:49:00