COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage VGS(th)  1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Complementary Pair MOSFET • Ultra-Small Surface Mount Package • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 2 &am

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DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Load Switch Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate

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美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件：457.81 Kbytes 页数：7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：285.4 Kbytes 页数：4 Pages

DIODES

美台半导体