首页 >DMC2004VK-7>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
DMC2004VK-7 | COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltageVGS(th) | DIODESDiodes Incorporated 达尔科技 |  | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •Ultra-SmallSurfaceMountPackage •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”D | DIODESDiodes Incorporated 达尔科技 | | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | | ||
DUALP-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •DualP-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltageVG | DIODESDiodes Incorporated 达尔科技 | |
详细参数
- 型号：
DMC2004VK-7
- 功能描述：
MOSFET 400mW 20V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
23+ |
SOT-563 |
45000 |
热卖优势现货 |
询价 | ||
DIODES |
16+ |
SMD |
30000 |
原装正品供应B |
询价 | ||
DIODES/美台 |
23+ |
SOT-223 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
DIODES/美台 |
1421+ |
SOT-563 |
2450 |
询价 | |||
DIODES(美台) |
23+ |
SOT-563 |
11600 |
进口原装假一赔十可开增值票 |
询价 | ||
DIODES |
22+ |
5000 |
华南区总代 |
询价 | |||
DIODES/美台 |
SOT563 |
7906200 |
询价 | ||||
DIODES |
2017+ |
SOT-563 |
21546 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
Diodes |
07+/08+ |
SOT-563 |
7500 |
询价 | |||
DIODES |
1337+ |
SOT-563 |
2644 |
询价 |
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