适配器/接口转换器

L-com

英飞畅

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V • High Drain Current: 1.1A • Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits • ESD Protected Gate • Lead Free By Design/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q

文件：63.86 Kbytes 页数：3 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：86.02 Kbytes 页数：3 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：154.39 Kbytes 页数：4 Pages

DIODES

美台半导体