包装：盒 功能：人机接口 类别：开发板，套件，编程器 评估和演示板及套件 描述：WATER TOLERANT 2D TOUCH AVR BRD

MICROCHIP

微芯科技

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output power

文件：64.14 Kbytes 页数：4 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

Description The PTF080101M is an unmatched 10-watt GOLDMOS® FETintended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features • Typical EDGE performance - Average out

文件：258.49 Kbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output power

文件：172.75 Kbytes 页数：9 Pages

INFINEON

英飞凌