DI9952T数据表ic资料供应价格美台半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
DI9952T	文件：300 bytes Page：1 Pages	MOSFET N/P-CH 30V 2.9A 8-SOIC	Diodes 美台半导体	Diodes
DI9952T	文件：100 bytes Page：1 Pages	包装：卷带（TR）类别：分立半导体产品晶体管 - FET，MOSFET - 单个描述：MOSFET N/P-CH 30V 2.9A 8-SOIC	DIODES 美台半导体	DIODES
IRF9952	文件：134.65 Kbytes Page：10 Pages	Power MOSFET(Vdss=-30V) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：134.65 Kbytes 页数：10 Pages	IRF	IRF
IRF9952PBF	文件：224.24 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：224.24 Kbytes 页数：10 Pages	IRF	IRF
IRF9952PBF	文件：229.77 Kbytes Page：10 Pages	ULTRA LOW ON RESISTANCE 文件：229.77 Kbytes 页数：10 Pages	IRF	IRF

更多DI9952T供应商更新时间2026-1-22 14:31:00