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DI9952T

包装:卷带(TR) 类别:分立半导体产品 晶体管 - FET,MOSFET - 单个 描述:MOSFET N/P-CH 30V 2.9A 8-SOIC

PAMDiodes Incorporated

龙鼎微龙鼎微电子(上海)有限公司

IRF9952

PowerMOSFET(Vdss=-30V)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952PBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

IRF9952PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952QPBF

HEXFETPowerMOSFET

Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952QPBF

AdvancedProcessTechnology

Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952QTRPBF

AdvancedProcessTechnology

Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952TRPBF

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

KDS9952A

DualN&P-ChannelEnhancementModeFieldEffectTransistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KRF9952

HEXFETPowerMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

产品属性

  • 产品编号:

    DI9952T

  • 制造商:

    Diodes Incorporated

  • 类别:

    分立半导体产品 > 晶体管 - FET,MOSFET - 单个

  • 包装:

    卷带(TR)

  • 描述:

    MOSFET N/P-CH 30V 2.9A 8-SOIC

供应商型号品牌批号封装库存备注价格
Diodes
24+
8-SOIC
7500
询价
DIODES
1809+
SOP-8
1675
就找我吧!--邀您体验愉快问购元件!
询价
DIODES
22+
NA
78
加我QQ或微信咨询更多详细信息,
询价
Diodes
22+
8SOP
9000
原厂渠道,现货配单
询价
Diodes Incorporated
2022+
8-SOP
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
DiodesInc
23+
SO-8
7750
全新原装优势
询价
DI
20+
SOP-8
2960
诚信交易大量库存现货
询价
DIODES
2025+
SOP8
3750
全新原厂原装产品、公司现货销售
询价
ROHM/罗姆
23+
1537
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
台湾冠西
24+
DIP
999999
强势库存!继电器专卖!
询价
更多DI9952T供应商 更新时间2025-5-25 16:30:00