DGD2190M中文资料HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8数据手册Diodes规格书

描述 Description

The DGD2190M is a high voltage/high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD2190M’s high-side to switch to 600V in a bootstrap operation under high dV/dt conditions.The DGD2190M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction.The DGD2190M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.

特性 Features

Floating High-Side Driver in Bootstrap Operation to 600V
Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuation
Output Drivers Capable of 4.5A/4.5A Typ Sink/Source
Logic Input (HIN and LIN) 3.3V Capability
Schmitt Triggered Logic Inputs with Internal Pull-Down
Undervoltage Lockout for High and Low-Side Drivers
Extended Temperature Range: -40°C to +125°C

应用 Application

DC-DC Converters 
DC-AC Inverters
AC-DC Power Supplies
Motor Controls
Class D Power Amplifiers

简介

DGD2190M属于集成电路（IC）的栅极驱动器。由制造生产的DGD2190M栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。