DGD2012中文资料HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8数据手册Diodes规格书

描述 Description

The DGD2012 is a mid-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2012’s high-side to switch to 200V in a bootstrap operation.The DGD2012 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction.The DGD2012 is available in a space saving SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.

特性 Features

•Floating High-Side Driver in Bootstrap Operation to 200V
•Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuation
•1.9A Source / 2.3A Sink Output Current Capability
•Outputs Tolerant to Negative Transients
•Wide Low-Side Gate Driver Supply Voltage: 10V to 20V
•Logic Input (HIN and LIN) 3.3V Capability
•Schmitt Triggered Logic Inputs with Internal Pull Down
•Undervoltage Lockout for High and Low Side Drivers
•Extended Temperature Range: -40°C To +125°C

应用 Application

•DC-DC Converters 
•DC-AC Inverters
•AC-DC Power Supplies
•Motor Controls
•Class D Power Amplifiers

简介

DGD2012属于集成电路（IC）的栅极驱动器。由Diodes制造生产的DGD2012栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。