DGD2012数据手册集成电路（IC）的栅极驱动器规格书PDF

描述 Description

The DGD2012 is a mid-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2012’s high-side to switch to 200V in a bootstrap operation.The DGD2012 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction.The DGD2012 is available in a space saving SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.

特性 Features

•Floating High-Side Driver in Bootstrap Operation to 200V
•Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuation
•1.9A Source / 2.3A Sink Output Current Capability
•Outputs Tolerant to Negative Transients
•Wide Low-Side Gate Driver Supply Voltage: 10V to 20V
•Logic Input (HIN and LIN) 3.3V Capability
•Schmitt Triggered Logic Inputs with Internal Pull Down
•Undervoltage Lockout for High and Low Side Drivers
•Extended Temperature Range: -40°C To +125°C

应用 Application

•DC-DC Converters 
•DC-AC Inverters
•AC-DC Power Supplies
•Motor Controls
•Class D Power Amplifiers