DGD1003中文资料HALF-BRIDGE GATE DRIVER IN V-DFN3035-8数据手册Diodes规格书

描述 Description

The DGD1003 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridgeconfiguration. High voltage processing techniques enable the DGD1003’s high side to switch to 150V in a bootstrap operation.

The DGD1003 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controllingdevices. The driver output features high pulse current buffers designed for minimum driver cross conduction. The DGD1003 has a fixed internal deadtime of 420ns (typical).

The DGD1003 is offered in the V-DFN3035-8 package and operates over an extended -40°C to +125°C temperature range.

特性 Features

•Floating High-Side Driver in Bootstrap Operation to 150V
•Drives Two N-channel MOSFETs or IGBTs in a Half-Bridge Configuration
•290mA Source/600mA Sink Output Current Capability
•Outputs Tolerant to Negative Transients
•Internal Dead Time of 420ns to Protect MOSFETs
•Wide Low Side Gate Driver Supply Voltage: 10V to 20V
•Logic Input (HIN and LIN*) 3.3V Capability
•Schmitt Triggered Logic Inputs
•Undervoltage Lockout for VCC (Logic and Low Side Supply)
•Extended Temperature Range: -40°C to +125°C
•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•Halogen and Antimony free. “Green” Device (Note 3)
•For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodesrepresentative. https://www.diodes.com/quality/product-definitions/

应用 Application

• DC-DC Converters

• DC-AC Inverters

• AC-DC Power Supplies

• Motor Controls

• Class D Power Amplifiers