DGD2118中文资料SINGLE CHANNEL GATE DRIVER IN SO8数据手册Diodes规格书

描述 Description

The DGD2117 and DGD2118 are high voltage / high speed gate drivers capable of driving one N-Channel MOSFET or IGBT in a bootstrap configuration. High voltage processing techniques enable the DGD2117 and DGD2118 to switch at 600V.The DGD2117 and DGD2118 logic inputs are compatible with standard CMOS outputs. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. The single floating channel can be used in high side and low side configuration.The DGD2117 and DGD2118 are offered in SO-8 (Type TH) package and the operating temperature extends from -40°C to +125°C.

特性 Features

Floating Channel in Bootstrap Operation to 600V
Drives One N-Channel MOSFET or IGBT
Outputs Tolerant to Negative Transients
Wide Logic Supply: 10V to 20V
Schmitt Triggered Logic Input with Internal Pull Down
Undervoltage Lockout
Extended Temperature Range: -40°C to +125°C
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device

应用 Application

DC-DC Converters
DC-AC Inverters
AC-DC Power Supplies
Motor Controls
Class D Power Amplifiers

简介

DGD2118属于集成电路（IC）的栅极驱动器。由制造生产的DGD2118栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。