HIGH-SIDE AND LOW-SIDE GATE DRIVERS IN SO-16 (TYPE TH)

文件：1.43325 Mbytes 页数：12 Pages

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美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Low On-Resistance • ESD Protected Gate • Totally Lead-Free & Full

文件：228.88 Kbytes 页数：3 Pages

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美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：222.41 Kbytes 页数：4 Pages

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美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：441.77 Kbytes 页数：5 Pages

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美台半导体