DGD2103A中文资料HALF-BRIDGE GATE DRIVER数据手册Diodes规格书

描述 Description

The DGD2103A is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD2103A’s high side to switch to 600V in a bootstrap operation.The DGD2103A logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. DGD2103A has a fixed internal deadtime of 520ns (typical).The DGD2103A is offered in SO-8 package and operates over an extended -40 °C to +125 °C temperature range.

特性 Features

Floating High-Side Driver in Bootstrap Operation to 600V
Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuration
290mA Source/600mA Sink Output Current Capability
Outputs Tolerant to Negative Transients
Internal Dead Time of 520ns to Protect MOSFETs
Wide Low-Side Gate Driver Supply Voltage: 10V to 20V
Logic Input (HIN and LIN*) 3.3V Capability
Schmitt Triggered Logic Inputs
Undervoltage Lockout for VCC (Logic- And Low-Side Supply)
Extended Temperature Range: -40°C to +125°C
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony free. “Green” Device

应用 Application

Motor Control
AC-DC Power Supplies

简介

DGD2103A属于集成电路（IC）的栅极驱动器。由Diodes制造生产的DGD2103A栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。