DG75A08TALS芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
DG75A08TALS	文件：638.67 Kbytes Page：12 Pages	丝印：DG75A08TALS；Package：TO-247-3L；750V/75A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss They are designed for the applications such as solar power and EV PTC. Features  Low VCE(sat) IGBT technology  Maximum junction temperature 175oC  VCE(sat) with positive temperature coefficient  Fast & so 文件：638.67 Kbytes 页数：12 Pages	STARPOWER 斯达半导体	STARPOWER
DG75A08TALS	文件：638.67 Kbytes Page：12 Pages	丝印：DG75A08TALS；Package：TO-247-3L；750V/75A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss They are designed for the applications such as solar power and EV PTC. Features  Low VCE(sat) IGBT technology  Maximum junction temperature 175oC  VCE(sat) with positive temperature coefficient  Fast & so 文件：638.67 Kbytes 页数：12 Pages	STARPOWER 斯达半导体	STARPOWER

更多DG75A08TALS供应商更新时间2026-1-22 14:25:00