Low-Voltage Single SPDT Analog Switch

DESCRIPTION The DG2012 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 Ω) and small physical size (SC70), the DG2012 is ideal for portabl

文件：73.01 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Low-Voltage Single SPDT Analog Switch

文件：122.14 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Low-Voltage Single SPDT Analog Switch

文件：122.14 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

文件：117.92 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

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POLYFET

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

文件：23.62 Kbytes 页数：3 Pages

NTE