首页 >DFDS6912A>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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High-CurrentSwitchingApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
BipolarTransistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DualN-ChannelLogicLevelPWMOptimizedPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DualN-ChannelLogicLevelPWMOptimizedPowerTrenchMOSFET GeneralDescription TheseN-ChannelLogicLevelMOSFETshavebeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DualN-ChannelLogicLevelPWMOptimizedPowerTrenchMOSFET GeneralDescription TheseN-ChannelLogicLevelMOSFETshavebeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithc | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DualN-ChannelLogicLevelPWMOptimizedPowerTrenchMOSFET GeneralDescription TheseN-ChannelLogicLevelMOSFETshavebeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithc | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DualN-Channel,LogicLevel,PowerTrenchTMMOSFET GeneralDescription TheseN-ChannelLogicLevelMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltagea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DualN-ChannelLogicLevelPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DualN-ChannelLogicLevelPowerTrenchÒMOSFET GeneralDescription TheseN-ChannelLogicLevelMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltagea | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
30VDualN-ChannelMOSFET Features •Fastswitchingspeed •Lowgatecharge •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=6A RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW |
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