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EN6912D

High-CurrentSwitchingApplications

SANYOSanyo Semicon Device

三洋三洋电机株式会社

EN6912D

BipolarTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FDS6912

DualN-ChannelLogicLevelPWMOptimizedPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS6912

DualN-ChannelLogicLevelPWMOptimizedPowerTrenchMOSFET

GeneralDescription TheseN-ChannelLogicLevelMOSFETshavebeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS6912

DualN-ChannelLogicLevelPWMOptimizedPowerTrenchMOSFET

GeneralDescription TheseN-ChannelLogicLevelMOSFETshavebeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FDS6912.

DualN-ChannelLogicLevelPWMOptimizedPowerTrenchMOSFET

GeneralDescription TheseN-ChannelLogicLevelMOSFETshavebeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FDS6912A

DualN-Channel,LogicLevel,PowerTrenchTMMOSFET

GeneralDescription TheseN-ChannelLogicLevelMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltagea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS6912A

DualN-ChannelLogicLevelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS6912A

DualN-ChannelLogicLevelPowerTrenchÒMOSFET

GeneralDescription TheseN-ChannelLogicLevelMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltagea

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FDS6912A

30VDualN-ChannelMOSFET

Features •Fastswitchingspeed •Lowgatecharge •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=6A RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

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