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FAN6390

HighlyIntegratedSecondary-SideAdaptiveUSBType-CChargingControllerwithUSB-PDwithSREmbedded

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FAN6390D

HighlyIntegratedSecondary-SideAdaptiveUSBType-CChargingControllerwithUSB-PDwithSREmbedded

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FAN6390MPX

HighlyIntegratedSecondary-SideAdaptiveUSBType-CChargingControllerwithUSB-PDwithSREmbedded

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FST6390

SchottkyMiniMod

SchottkyMiniMod ●SchottkyBarrierRectifier ●GuardRingProtection ●2X30Amperesavg. ●175°CJunctionTemperature ●ReverseEnergyTested ●VRRM-80to100VoltsRRM ●ROHSCompliant

MicrosemiMicrosemi Corporation

美高森美美高森美公司

FST6390

SchottkyMiniMod

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GM6390

TONE/PULSESWITCHABLEDIALERWITHREDIAL

Description TheGM6390isamonolithic,integratedcircuitmanufacturedusingGSsiliconGateCMOSprocess.

LG

LG life's good

ILC6390

SOT-89Step-UpPFMSwitcherwithAuto-LoadSense

Description 50mAboostconverterusingPulseFrequencyModulation,orPFM,technique,in5-leadSOT-89ora5-leadSOT-23package.Only3externalcomponentsareneededtocompletetheswitcherdesign. Features •85conversionefficiencyat50mAout •Start-upvoltagesaslowas900mV •±2.5

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

ILC6390

SOT-89STEP-UPPFMSWITCHERWITHAUTO-LOADSENSE

GeneralDescription 50mAboostconverterusingPulseFrequencyModulation,orPFM,technique,in5-leadSOT-89ora5-leadSOT-23package.Only3externalcomponentsareneededtocompletetheswitcherdesign. Features •85conversionefficiencyat50mAout •Start-upvoltagesaslowas900mV

IMPALA

Impala Linear Corporation

L6390

High-voltagehighandlowsidedriver

Description TheL6390isahigh-voltagedevicemanufacturedwiththeBCDOFF-LINEtechnology.Itisamonolithichalf-bridgegatedriverforN-channelPowerMOSFETorIGBT. Thehighside(floating)sectionisdesignedtostandavoltagerailupto600V.ThelogicinputsareCMOS/TTLcompati

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

L6390D

High-voltagehighandlowsidedriver

Description TheL6390isahigh-voltagedevicemanufacturedwiththeBCDOFF-LINEtechnology.Itisamonolithichalf-bridgegatedriverforN-channelPowerMOSFETorIGBT. Thehighside(floating)sectionisdesignedtostandavoltagerailupto600V.ThelogicinputsareCMOS/TTLcompati

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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