丝印：DF637；Package：SOIC；HIGH-SPEED DIFFERENTIAL LINE RECEIVERS

Meets or Exceeds the Requirements of ANSI TIA/EIA-644 Standard Operates With a Single 3.3-V Supply Designed for Signaling Rate of up to 155 Mbps Differential Input Thresholds ±100 mV Max Low-Voltage TTL (LVTTL) Logic Output Levels Open-Circuit Fail Safe Characterized For Operation From 0

文件：331.67 Kbytes 页数：20 Pages

TI

德州仪器

丝印：DF637；Package：SOIC；HIGH-SPEED DIFFERENTIAL LINE RECEIVERS

Meets or Exceeds the Requirements of ANSI TIA/EIA-644 Standard Operates With a Single 3.3-V Supply Designed for Signaling Rate of up to 155 Mbps Differential Input Thresholds ±100 mV Max Low-Voltage TTL (LVTTL) Logic Output Levels Open-Circuit Fail Safe Characterized For Operation From 0

文件：331.67 Kbytes 页数：20 Pages

TI

德州仪器

Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed

文件：240.68 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel 30 V (D-S) MOSFET

文件：1.03816 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 2.5V Specified PowerTrench짰 MOSFET 20V, 6.2A, 24m廓

文件：403.14 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体