LT8610AB Demo Board | Micropower Synchronous Buck, High Efficiency Burst Mode, 5.5V ≤ VIN ≤ 42V, VOUT = 5V @ 3.5A

Demonstration circuit 2012A is a 42V, 3.5A micropower synchronous step-down regulator featuring the LT8610AB. The LT8610AB is a compact, high efficiency, high speed synchronous monolithic step-down switching regulator that consumes only 2.5μA of quiescent current when output is regulated at 5V. The

ADI

亚德诺

包装：盒 类别：开发板，套件，编程器 评估板 - DC/DC 与 AC/DC（离线）SMPS 描述：BOARD EVAL FOR LT8610A

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亚德诺

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

文件：117.92 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

文件：37.55 Kbytes 页数：2 Pages

POLYFET

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

文件：23.62 Kbytes 页数：3 Pages

NTE