首页 >DAC1265LCD>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HI-SPEED12-BITD/ACONVERTER | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
HI-SPEED12-BITD/ACONVERTER | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
8MNonvolatileSRAM DESCRIPTION TheDS12658MNonvolatileSRAMsare8,388,608-bit,fullystaticnonvolatileSRAMsorganizedas1,048,576wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
3.3V8MbNonvolatileSRAM DESCRIPTION TheDS1265W8Mbnonvolatile(NV)SRAMsare8,388,608-bit,fullystatic,NVSRAMsorganizedas1,048,576wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrythatconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondition | DallasDallas Semiconductor 亚德诺亚德诺半导体 | Dallas | ||
3.3V8MbNonvolatileSRAM | DallasDallas Semiconductor 亚德诺亚德诺半导体 | Dallas | ||
3.3V8MbNonvolatileSRAM | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
8MNonvolatileSRAM DESCRIPTION TheDS12658MNonvolatileSRAMsare8,388,608-bit,fullystaticnonvolatileSRAMsorganizedas1,048,576wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
CMOSIC2-CellLithium-IonSecondaryBatteryProtectionIC | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
SiliconCarbideSchottkyDiode | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbideSchottkyDiode650V,12A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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