首页 >D9N05L>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
9.0A,52V,N?묬hannel,LogicLevel,ClampedMOSFETw/ESDProtectioninaDPAKPackage PowerMOSFET 9.0A,52V,N−Channel,LogicLevel,ClampedMOSFETw/ESDProtectioninaDPAKPackage Benefits •HighEnergyCapabilityforInductiveLoads •LowSwitchingNoiseGeneration Features •DiodeClampBetweenGateandSource •ESDProtection−HBM5000V •ActiveOver−VoltageGate | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET PowerMOSFET 9.0A,52V,N−Channel,LogicLevel,ClampedMOSFETw/ESDProtectioninaDPAKPackage Benefits •HighEnergyCapabilityforInductiveLoads •LowSwitchingNoiseGeneration Features •DiodeClampBetweenGateandSource •ESDProtection−HBM5000V •ActiveOver−VoltageGate | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
9.0A,52V,N?묬hannel,LogicLevel,ClampedMOSFETw/ESDProtectioninaDPAKPackage PowerMOSFET 9.0A,52V,N−Channel,LogicLevel,ClampedMOSFETw/ESDProtectioninaDPAKPackage Benefits •HighEnergyCapabilityforInductiveLoads •LowSwitchingNoiseGeneration Features •DiodeClampBetweenGateandSource •ESDProtection−HBM5000V •ActiveOver−VoltageGate | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
9.0A,52V,N?묬hannel,LogicLevel,ClampedMOSFETw/ESDProtectioninaDPAKPackage PowerMOSFET 9.0A,52V,N−Channel,LogicLevel,ClampedMOSFETw/ESDProtectioninaDPAKPackage Benefits •HighEnergyCapabilityforInductiveLoads •LowSwitchingNoiseGeneration Features •DiodeClampBetweenGateandSource •ESDProtection−HBM5000V •ActiveOver−VoltageGate | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
ProtectedPowerMOSFET2.6A,52V,N−Channel,LogicLevel,ClampedMOSFETw/ESDProtectioninaSOT−223Package Benefits •HighEnergyCapabilityforInductiveLoads •LowSwitchingNoiseGeneration Features •DiodeClampBetweenGateandSource •ESDProtection−HBM5000V •ActiveOver−VoltageGatetoDrainClamp •ScalabletoLowerorHigherRDS(on) •InternalSeriesGateResistance •Pb−FreeP | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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