首页 >D856-P>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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P-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription SuperSOTTM-8P-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformanc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPEPITAXIALPLANARTRANSISTOR | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM | ||
TheGBC856isdesignedforswitchingandAFamplifierapplication,suitableforautomaticinsertioninthickandthin-filmcircuits | ETLE-Tech Electronics LTD 亚历电子亚历电子有限公司 | ETL | ||
FASTSWITCHINGPLASTICRECTIFIER FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Highsurgecurrentcapability ♦Fastswitchingforhighefficiency ♦Constructionutilizesvoid-freemoldedplastictechnique ♦Highforwardcurrentoperation ♦Hightemperaturesolderingguaranteed:2 | GE GE Industrial Company | GE | ||
FastSwitchingPlasticRectifier FEATURES •Fastswitchingforhighefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Solderdip275°Cmax.10s,perJESD22-B106 •ComplianttoRoHSdirective2002/95/ECandin accordancetoWEEE2002/96/EC TYPICALAPPLICATIONS Forusei | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
FastSwitchingPlasticRectifier FEATURES •Fastswitchingforhighefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PNPGeneralPurposeTransistor | GSMEGuilin Strong Micro-Electronics Co., Ltd. 桂微桂林斯壮桂微电子有限责任公司 | GSME | ||
PNPEPITAXIALPLANARTRANSISTOR | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM | ||
PNPEPITAXIALPLANARTRANSISTOR | ETLE-Tech Electronics LTD 亚历电子亚历电子有限公司 | ETL | ||
FeaturedProductsBulletin | BournsBourns Electronic Solutions 伯恩斯 | Bourns |
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