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UPD75P108B

MOSINTEGRATEDCIRCUIT

FEATURES •Versionwithon-chipPROM,allowinglow-voltageoperationVDD=2.7to6.0V •mPD75108compatible •Memorycapacity •Programmemory(PROM):8064´8bits •Datamemory(RAM):512´4bits •CorrespondencetoQTOP™microcomputer

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD75P108B

4-BITSINGLE-CHIPMICROCOMPUTER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD75P108BCW

MOSINTEGRATEDCIRCUIT

FEATURES •Versionwithon-chipPROM,allowinglow-voltageoperationVDD=2.7to6.0V •mPD75108compatible •Memorycapacity •Programmemory(PROM):8064´8bits •Datamemory(RAM):512´4bits •CorrespondencetoQTOP™microcomputer

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD75P108BCW

4-BITSINGLE-CHIPMICROCOMPUTER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD75P108BDW

MOSINTEGRATEDCIRCUIT

FEATURES •Versionwithon-chipPROM,allowinglow-voltageoperationVDD=2.7to6.0V •mPD75108compatible •Memorycapacity •Programmemory(PROM):8064´8bits •Datamemory(RAM):512´4bits •CorrespondencetoQTOP™microcomputer

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD75P108BDW

4-BITSINGLE-CHIPMICROCOMPUTER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

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