首页 >D6N02H>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET Description TheG6N02Lusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DUALTMOSPOWERMOSFET6.0AMPERES20VOLTS DualHDTMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityTMOSprocess.TheseminiaturesurfacemountMOSFETsfeaturelowRDS(on)andtruelogiclevelperformance.DualHDTMOSdevicesaredesignedforuseinlowvoltage,highspeedswitchingapplication | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
DualN-channelTrenchMOSlogiclevelFET 1.1Generaldescription DuallogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
DualTrenchMOSlogiclevelFET | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
20VN?묬hannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | Winsemi |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
