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倒装结构、高亮度、高可靠性;

Nationstar

国民技术

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：517.88 Kbytes 页数：7 Pages

DIODES

美台半导体

Low On-Resistance

文件：546.35 Kbytes 页数：7 Pages

DIODES

美台半导体

60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench technolo gy to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. DMN6075SQ General Features VDS = 60V ID =3A RDS(ON)

文件：1.92812 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子