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FDB6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB6030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=48A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6030

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·12A,30VRDS(ON)=1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030

N-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030BL

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030BL

N-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030BL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·12A,30VRDS(ON)=1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030L

30VN-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
TI
25+
SBGA
1000
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价
TI
00/01+
SBGA
105
全新原装100真实现货供应
询价
SICHUANINSTRUMENT
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
VBSEMI/台湾微碧
23+
TO252
50000
全新原装正品现货,支持订货
询价
AO/万代
SOT-252-4L
22+
6000
十年配单,只做原装
询价
AO/万代
22+
SOT-252-4L
25000
只做原装进口现货,专注配单
询价
AO/万代
22+
SOT-252-4L
25000
只做原装进口现货,专注配单
询价
AO/万代
25+
SOT-252-4
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
AO/万代
25+
SOT-252-4L
5999
原装正品,假一罚十!
询价
VBSEMI/台湾微碧
24+
TO252
60000
全新原装现货
询价
更多D6030D供应商 更新时间2025-7-26 11:02:00