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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FQB5N20	文件：704.34 Kbytes Page：9 Pages	200VN-ChannelMOSFET 200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB5N20L	文件：539.9 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD5N20	文件：304.99 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD5N20	文件：701.49 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD5N20	文件：695.87 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD5N20L	文件：529.94 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.2Ω@VGS=10V •Lowgatecharge(typical4.8nC) •LowCrss(typical6.0pF) •Fast	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD5N20LTM	文件：863.19 Kbytes Page：8 Pages	N-ChannelQFETMOSFET200V,3.8A,1.2	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD5N20TF	文件：701.49 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI5N20	文件：539.9 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI5N20	文件：704.34 Kbytes Page：9 Pages	200VN-ChannelMOSFET 200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI5N20L	文件：539.9 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP5N20	文件：301.42 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQP5N20	文件：688.29 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP5N20L	文件：605.36 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF5N20	文件：715.06 Kbytes Page：8 Pages	200VN-ChannelMOSFET Features •3.5A,200V,RDS(on)=1.2Ω@VGS=10V •Lowgatecharge(typical6.0nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF5N20L	文件：554.73 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQT5N20	文件：635.4 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU5N20	文件：330.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQU5N20	文件：701.49 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU5N20	文件：695.87 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	D5N20ZA	D	23+	TO-252	12300	全新原装真实库存含13点增值税票!	询价
深圳市新力诚科技有限公司	D5N20ZA	Doingter	2020+	TO-252	55220	公司代理品牌,原装现货超低价清仓!	询价
深圳市国宇半导体科技有限公司	D5N20ZA	D	23+	TO-252	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	D5N20ZA	D	22+	TO-252	6000	十年配单,只做原装	询价
深圳市跃创芯科技有限公司	D5N20ZA	D	22+	TO-252	25000	只做原装进口现货,专注配单	询价
深圳市创新迹电子有限公司	D5N20ZA	D	22+	TO-252	25000	只做原装进口现货,专注配单	询价
深圳兆威电子有限公司	D5N20低压MOS管	ST/意法	23+	TO-252	90000	原装原盘	询价
深圳市汇莱威科技有限公司	D5N40		AO/万代	SOT-252	68900	原包原标签100%进口原装常备现货!	询价
深圳新景润电子科技有限公司	D5N50	DONGHAI	23+	TO-252	80000	原装正品,一级代理	询价
现代芯城（深圳）科技有限公司	D5N50		24+	N/A	50000	一级代理-主营优势-实惠价格-不悔选择	询价

更多D5N20ZA供应商更新时间2024-9-24 15:30:00

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