首页 >D5N10>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100VN-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
100VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@2.5A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
100VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@4A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
100VN-ChannelEnhancementModeMOSFET RDS(ON),VGS@10V,ID@2.5A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheTF5N10usesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasaBatteryprotection orinotherSwitchingapplication. GeneralFeatures VDS=100VID=5A RDS(ONty | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
