丝印：D55N10A；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

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PANJIT

強茂

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=61A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =26mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：362.59 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Channel MOSFET

文件：658.78 Kbytes 页数：8 Pages

Fairchild

仙童半导体