PJD55P03E-AU

Marking：D55P03E；Package：TO-252AA；30V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-20A

RM135P40DF

Marking：D5P40；Package：DFN5X6-8L；40V P-Channel Trench Power MOSFET

Features ●LowGateCharge ●100%UISTested,100%DVDSTested ●HighPowerandcurrenthandingcapability ●Leadfreeproductisacquired ●VDS-40V,ID-135A RDS(ON)_TYP3.1mΩ,QG20nC

RT8010PQW

Marking：D5*；Package：WDFN-62x2；1.5MHz, 1A, High Efficiency PWM Step-Down DC/DC Converter

GeneralDescription TheRT8010/Aisahigh-efficiencyPulse-Width-Modulated(PWM)step-downDC-DCconverter.Capableofdelivering1Aoutputcurrentoverawideinputvoltagerangefrom2.5Vto5.5V,theRT8010/Aisideallysuitedforportableelectronicdevicesthatarepoweredfrom1-cellLi-io

SI2325DS

Marking：D5TPM；Package：SOT-23；-150V,P-Channel Power Trench MOSFET

Application LoadSwitch ActiveClampSwitch

SN74LVC1G132DCKR

Marking：D55；Package：SC70；SN74LVC1G132 Single 2-Input NAND Gate With Schmitt-Trigger Inputs

1Features •Latch-UpPerformanceExceeds100mAPer JESD78,ClassII •ESDProtectionExceedsJESD22 –2000-VHuman-BodyModel(A114-A) –200-VMachineModel(A115-A) –1000-VCharged-DeviceModel(C101) •AvailableinTexasInstruments NanoStar™andNanoFree™Packages •Supports5-VV

SN74LVC1G132DCKT

Marking：D55；Package：SC70；SN74LVC1G132 Single 2-Input NAND Gate With Schmitt-Trigger Inputs

1Features •Latch-UpPerformanceExceeds100mAPer JESD78,ClassII •ESDProtectionExceedsJESD22 –2000-VHuman-BodyModel(A114-A) –200-VMachineModel(A115-A) –1000-VCharged-DeviceModel(C101) •AvailableinTexasInstruments NanoStar™andNanoFree™Packages •Supports5-VV

SN74LVC2G132YZPR

Marking：D57；Package：DSBGA；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

1FEATURES 2•AvailableinTexasInstrumentsNanoFree™ Package •Supports5-VVCCOperation •InputsAcceptVoltagesto5.5V •Maxtpdof5.3nsat3.3V •LowPowerConsumption,10-μAMaxICC •±24-mAOutputDriveat3.3V •TypicalVOLP(OutputGroundBounce)

STD5NK50Z-1

Marking：D5NK50Z；Package：TO-251；N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchse

STD5NK50Z-1

Marking：D5NK50Z；Package：TO-251；N-CHANNEL500V-1.22W-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchse

STD5NK50ZT4

Marking：D5NK50Z；Package：DPAK；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

Features •100avalanchetested •Gatechargeminimized •Verylowintrinsiccapacitance •Zener-protected Applications •Switchingapplications Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH™technologybySTMicroelect