AZ23B10-G

Marking：D55；Package：SOT-23；Small Signal Zener Diodes, Dual

FEATURES •DualsiliconplanarZenerdiodes,commonanode •TheZenervoltagesaregradedaccordingtotheinternationalE24standard.StandardZenervoltagetoleranceis±5,indicatedbythe“C”intheorderingcode.Replace“C”with“B”for2tolerance. •Theparametersarevalidfor

AZ23B10-G

Marking：D55；Package：SOT-23；Small Signal Zener Diodes, Dual

FEATURES •Thesediodesarealsoavailableinothercase   stylesandconfigurationsincluding:thedual   diodecommoncathodeconfigurationwithtype   designationDZ23,thesinglediodeSOT-23   casewiththetypedesignationBZX84C,andthe   singlediodeSOD-123casewiththetype

AZ23B10-G

Marking：D55；Package：SOT-23；Small Signal Zener Diodes, Dual

FEATURES •Thesediodesarealsoavailableinothercase   stylesandconfigurationsincluding:thedual   diodecommoncathodeconfigurationwithtype   designationDZ23,thesinglediodeSOT-23   casewiththetypedesignationBZX84C,andthe   singlediodeSOD-123casewiththetype

AZ23C10-G

Marking：D55；Package：SOT-23；Small Signal Zener Diodes, Dual

FEATURES •DualsiliconplanarZenerdiodes,commonanode •TheZenervoltagesaregradedaccordingtotheinternationalE24standard.StandardZenervoltagetoleranceis±5,indicatedbythe“C”intheorderingcode.Replace“C”with“B”for2tolerance. •Theparametersarevalidfor

AZ23C10-G

Marking：D55；Package：SOT-23；Small Signal Zener Diodes, Dual

FEATURES •Thesediodesarealsoavailableinothercase   stylesandconfigurationsincluding:thedual   diodecommoncathodeconfigurationwithtype   designationDZ23,thesinglediodeSOT-23   casewiththetypedesignationBZX84C,andthe   singlediodeSOD-123casewiththetype

AZ23C10-G

Marking：D55；Package：SOT-23；Small Signal Zener Diodes, Dual

FEATURES •Thesediodesarealsoavailableinothercase   stylesandconfigurationsincluding:thedual   diodecommoncathodeconfigurationwithtype   designationDZ23,thesinglediodeSOT-23   casewiththetypedesignationBZX84C,andthe   singlediodeSOD-123casewiththetype

SN74LVC1G132DCKR

Marking：D55；Package：SC70；SN74LVC1G132 Single 2-Input NAND Gate With Schmitt-Trigger Inputs

1Features •Latch-UpPerformanceExceeds100mAPer JESD78,ClassII •ESDProtectionExceedsJESD22 –2000-VHuman-BodyModel(A114-A) –200-VMachineModel(A115-A) –1000-VCharged-DeviceModel(C101) •AvailableinTexasInstruments NanoStar™andNanoFree™Packages •Supports5-VV

SN74LVC1G132DCKT

Marking：D55；Package：SC70；SN74LVC1G132 Single 2-Input NAND Gate With Schmitt-Trigger Inputs

1Features •Latch-UpPerformanceExceeds100mAPer JESD78,ClassII •ESDProtectionExceedsJESD22 –2000-VHuman-BodyModel(A114-A) –200-VMachineModel(A115-A) –1000-VCharged-DeviceModel(C101) •AvailableinTexasInstruments NanoStar™andNanoFree™Packages •Supports5-VV

AOD558

Marking：D558；Package：TO-252-3L；N-Channel Enhancement Mode Power MOSFET

Features *30V50A Rosow3.88mQ@Ves=10V(Typ) «AdvancedTrenchTechnology +ProvideExcellentRoscoandLowGateCharge «Leadfreeproductisacquired

PJD55N03_L2_00001

Marking：D55N03；Package：TO-252AA；30V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@16A