High Power Bipolar Transistor

Description: Designed for various specific and general purpose application such as; output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; series, shunt and switching regulators; low and high frequency inverters/converters and many others. Features: • Ve

文件：640.93 Kbytes 页数：4 Pages

MULTICOMP

易络盟

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A • Fast Switching Speeds • Complement to Type D45H11 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general purpose power amplification and s

文件：188.11 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Fast switching speeds • Low collector saturation voltage APPLICATIONS • For general purpose power amplification and switching regulators,converters and power amplifiers applications

文件：119.08 Kbytes 页数：5 Pages

SAVANTIC

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low collector-emitter saturation voltage, fast switching speed. Features General purpose switching, general purpose amplifier.

文件：859.98 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

NPN SILICON POWER TRANSISTORS

Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ S

文件：62.43 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

Low Vcesat NPN Epitaxial Planar Transistor

Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics

文件：180.52 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技

Low Vcesat NPN Epitaxial Planar Transistor

Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free package

文件：177.03 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技

丝印：D44H11FP；Package：TO-220FP；Complementary power transistors

Description These low voltage transistors are housed in fully isolated TO-220FP packages and form a complementary pair. They are manufactured in multi epitaxial planar technology for general purpose in linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Fas

文件：191.06 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Low Vcesat NPN Epitaxial Planar Transistor

Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics

文件：174.89 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技

POWER TRANSISTORS(10A,30-80V,50W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 30-80 VOLTS 50 WATTS

文件：157.08 Kbytes 页数：3 Pages

MOSPEC

统懋