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FQB3N30

300VN-ChannelMOSFET

Features •3.2A,300V,RDS(on)=2.2Ω@VGS=10V •Lowgatecharge(typical5.5nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD3N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD3N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI3N30

300VN-ChannelMOSFET

Features •3.2A,300V,RDS(on)=2.2Ω@VGS=10V •Lowgatecharge(typical5.5nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP3N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.2A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQP3N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF3N30

300VN-ChannelMOSFET

Features •1.95A,300V,RDS(on)=2.2Ω@VGS=10V •Lowgatecharge(typical5.5nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU3N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU3N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

HM3N30PR

SiliconN-ChannelPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

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