丝印：D25N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@15A

文件：396.79 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：D25N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@15A

文件：402.17 Kbytes 页数：7 Pages

PANJIT

強茂

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：230.94 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

N-Channel Enhancement Mode Power MOSFET

Description The G25N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：665.72 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

Power switching application

文件：681.37 Kbytes 页数：6 Pages

HMSEMI

华之美半导体