丝印：D23；11 V Input 150 mA LDO

FEATURES • Output Current Typ. 150 mA • Supply Current Typ. 2.0 A • Standby Current Typ. 0.2 A • Dropout Voltage .

文件：1.14536 Mbytes 页数：34 Pages

NISSHINBO

日清纺微电子

丝印：D23；0.5A/1A PWM/VFM Step-down DC/DC Converter with Synchronous Rectifier

FEATURES • Input Voltage Range (Maximum Rating)···························· 2.3 V to 5.5 V (6.5 V) • Output Voltage Range (Fixed Output Voltage Type) ············· 0.6 V to 3.3 V, settable in 0.1 V steps (Adjustable Output Voltage Type)······· 0.6 V to 5.5 V • Output Voltage Accuracy (Fixed Ou

文件：1.7155 Mbytes 页数：43 Pages

NISSHINBO

日清纺微电子

丝印：D2311D；Package：SSON06RX2020；Single-Channel Ultra-Fast Gate Driver

Features ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and Non-inverting Inputs ◼ Small

文件：1.27176 Mbytes 页数：19 Pages

ROHM

罗姆

丝印：D2311C；Package：SSON06RX2020；Single-Channel Ultra-Fast Gate Driver For Automotive

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and

文件：1.28101 Mbytes 页数：19 Pages

ROHM

罗姆

丝印：D2320U；Package：HTSOP-J8；High Frequency High-Side and Low-Side Driver

General Description This is the product guarantees long time support in industrial market. BD2320EFJ-LA and BD2320UEFJ-LA are the 100 V maximum voltage High-Side and Low-Side gate drivers which can drive external Nch-FET using the bootstrap method. The driver includes a 100 V bootstrap diode

文件：1.13775 Mbytes 页数：21 Pages

ROHM

罗姆

丝印：D232；Package：SOT-143；1-, 2- and 4-Channel Low Capacitance ESD Protection Arrays

Product Description The CM1213A family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.These devices are ideal for protecting systems with high data and clock rates or for circuits requiring l

文件：418.43 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：D238；Package：MSOP-10；1-, 2- and 4-Channel Low Capacitance ESD Protection Arrays

Product Description The CM1213A family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.These devices are ideal for protecting systems with high data and clock rates or for circuits requiring l

文件：418.43 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：D238；Package：MSOP-10；1, 2 and 4-Channel Low Capacitance ESD Protection Array

文件：576.22 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

1.3 mm D2300-Type Laser Isolated DFB Laser Module

Description The D2300-Type Digital Isolated DFB Laser Module contains an internally cooled, InGaAsP, distributed feedback (DFB) laser designed for 1.3 µm applications. The laser is designed to be used in OC-12/STM-4 (622 Mbits/s) and OC-48/STM-16 (2.488 Gbits/s) for long-reach and extended-rea

文件：265.89 Kbytes 页数：8 Pages

AGERE

1.3 m D2300-Type Laser Isolated DFB Laser Module

Description The D2300-Type Digital Isolated DFB Laser Module contains an internally cooled, InGaAsP, distributed feedback (DFB) laser designed for 1.3 µm applications. The laser is designed to be used in OC-12/STM-4 (622 Mbits/s) and OC-48/STM-16 (2.488 Gbits/s) for long-reach and extended-rea

文件：265.89 Kbytes 页数：8 Pages

MICRO-ELECTRONICS