零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
P?묬hannelDPAKPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
SWITCHINGP-CHANNELPOWERMOSFET | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=48mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP20P06YLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Lowon-stateresistance RDS(on)=47mMAX.(VGS=–10V,ID=–10A) RDS(on)=64mMAX.(VGS=–5V,ID=–10A) RDS(on)=70mMAX.(VGS=–4.5V,ID=–10A | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-15A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=48mΩ(Max)@VGS=-5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET??0V,??5.5A,SingleP?묬hannel,DPAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET??0V,??5.5A,SingleP?묬hannel,DPAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET??0V,??5.5A,SingleP?묬hannel,DPAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
12+ |
TO-252(DPAK) |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
MOT |
07+ |
10000 |
询价 | ||||
ON/安森美 |
21+ |
TO-252(DPAK) |
30000 |
只做正品原装现货 |
询价 | ||
ON |
22+ |
TO-252 |
95000 |
郑重承诺只做原装进口货 |
询价 | ||
ON |
22+ |
TO-252 |
95000 |
原装进口现货假一赔十 |
询价 | ||
ON |
2023+ |
TO-251 |
50000 |
原装现货 |
询价 | ||
GOTOP |
23+ |
DIP20 |
5000 |
原装正品,假一罚十 |
询价 | ||
GOTOP |
22+23+ |
DIP20 |
37638 |
绝对原装正品全新进口深圳现货 |
询价 | ||
GOTOP |
2023+ |
DIP20 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
GOTOP |
21+ |
DIP20 |
35200 |
一级代理分销/放心采购 |
询价 |
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