KSD2058

SiliconNPNPowerTransistors

KSD2058YTU

LowFrequencyPowerAmplifier

KTD2058

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=60V(Min.) •CollectorPowerDissipation :PC=25W@TC=25℃ •LowCollectorSaturationVoltage- :VCE(sat)=-1.0V(Max)@(IC=-2A,IB=-0.2A) •ComplementtoTypeKTB1366 APPLICATIONS •Designedforlowfrequencypower

KTD2058

TO-220-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowCollectorSaturationVoltage:VCE(SAT)=1.0V(MAX)

KTD2058

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES •LowCollectorSaturationVoltage :VCE(SAT)=1.0V(MAX).

KTD2058

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE)

KTD525GENERALPURPOSEAPPLICATION. FEATURES •LowSaturationVoltage :VCE(sat)=1.0V(Max.)atIC=2A,IB=0.2A. •ComplementarytoKTB1366.

KTD2058

3A,60VPPlastic-EncapsulatedTransistor

FEATURES •Lowcollectorsaturationvoltage:VCE(sat)=1V(Max.)

KTD2058

SiliconNPNtransistorinaTO-220FPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-220FPlasticPackage. Features Lowsaturationvoltage,complementarytoKTB1366. Applications GeneralPurposeApplication.

KTD2058

36-ChannelRGBLEDDriverswithI2CControl

Features •Drivesupto36LEDs(12RGBs) •MultiplexedLEDCurrentDriverOutputs Only12PCBTracestotheLEDs 23kHzMUXFrequencyPreventsAudioNoise •14MillionColors LEDCurrent:125μAto24mAin125μASteps Night-Mode:8μAto1.5mAin8μASteps 5Max.CurrentAccuracy

KTD2058

TO-220-3LPlastic-EncapsulateTransistors

FEATURES LowCollectorSaturationVoltage:VCE(SAT)=1.0V(MAX)