BD18398AEUV-ME2

Marking：D18398A；Package：HTSSOP-C48；2 ch/3 ch Current LED Driver with BD18397ARUV-M BD18398ARUV-M BD18397AEUV-M BD18398AEUV-M

Features ◼AEC-Q100Qualified(Note1) ◼ISO26262ProcessComplianttoSupportASIL-B ◼On-timeTopologyforNearFixedFrequencySwitching ◼AverageLEDCurrentRegulation ◼ProtectionDiodesLessforCurrentSensePins ◼Cycle-by-cycleSwitchOverCurrentProtection ◼ThermalShutdown(TS

BD18398ARUV-ME2

Marking：D18398A；Package：HTSSOP-C48R；2 ch/3 ch Current LED Driver with BD18397ARUV-M BD18398ARUV-M BD18397AEUV-M BD18398AEUV-M

Features ◼AEC-Q100Qualified(Note1) ◼ISO26262ProcessComplianttoSupportASIL-B ◼On-timeTopologyforNearFixedFrequencySwitching ◼AverageLEDCurrentRegulation ◼ProtectionDiodesLessforCurrentSensePins ◼Cycle-by-cycleSwitchOverCurrentProtection ◼ThermalShutdown(TS

PJD18N20_L2_00001

Marking：D18N20；Package：TO-252AA；200V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@9A

SD18C

Marking：D18C；Package：SOD-323；TVS ARRAY

350Wattspeakpulsepower(tp=8/20μs) Transientprotectionfordatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)24A(8/20μs) Smallpackageforuseinportableelectronics SuitablereplacementforMLV’sinESDprotect

TFD180N02

Marking：D180N02；Package：TDFN2030-8；N -CHANNEL ENHANCEMENT MODE POWER MOSFET

FEATURE -TrenchFETPowerMOSFET -ExcellentRDS(on) -LowGateCharge -HighPowerandCurrentHandingCapability -SurfaceMountPackage APPLICATION -BatteryProtection -LoadSwitch -PowerManagement

2SB1202S-TL-ETP-FA

Marking：D1802；Package：TP-FA；High-Current Switching Applications

2SB1202T-TL-ETP-FA

Marking：D1802；Package：TP-FA；High-Current Switching Applications

2SB1203S-TL-E

Marking：D1803；Package：TP-FA；High-Current Switching Applications

2SB1203S-TL-H

Marking：D1803；Package：TP-FA；High-Current Switching Applications

2SB1203T-TL-E

Marking：D1803；Package：TP-FA；High-Current Switching Applications