2SD1859

Marking：D1859；Package：ATV；Medium Power Amp. Epitaxial Planar NPN Silicon Transistors

MediumPowerAmp.EpitaxialPlanarNPNSiliconTransistors

2SD1862

Marking：D1862；Package：ATV；Medium Power Transistor (32V, 2A)

Features 1)LowVCE(sat).VCE(sat)=0.5V(Typ.)(IC/IB=2A/0.2A) 2)Complementsthe2SB1188/2SB1182/2SB1240/2SB891F/2SB822/2SB1277/2SB911M Structure Epitaxialplanartype NPNsilicontransistor

2SD1862

Marking：D1862；Package：ATV；Medium Power Transistor (32V, 2A)

FTR•FTL Lowprofileflat-packageforlimitedspeceapplications. Tapetypecanbeusedonautomatedline.Bulktypeisalsoavailable.

2SD1863

Marking：D1863；Package：SPT/SC-72；Power Transistor (80V, 1A)

●Features 1)HighVCEO,VCEO=80V 2)HighIC,IC=1A(DC) 3)GoodhFElinearity. 4)LowVCE(sat). 5)Complementsthe2SB1260/2SB1241/2SB1181.

2SD1866

Marking：D1866；Package：ATV；Medium Power Transistor(Motor, Relay drive) (60짹10V, 2A)

Features 1)Built-inzenerdiodebetweencollectorandbase. 2)StrongprotectionagainstreversesurgesduetoLloads. 3)Built-inresistorbetweenbaseandemitter. 4)Built-indamperdiode.

2SD1867

Marking：D1866；Package：ATV；Power Transistor (100V, 2A)

Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SB1580/2SB1316.

2SD1867

Marking：D1866；Package：ATV；Transistors

PowerTransistor(+/-100V/+/-2A)

2SD1867

Marking：D1866；Package：ATV；Power Transistor (100V , 2A)

Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SB1580/2SB1316.

PJD18N20_L2_00001

Marking：D18N20；Package：TO-252AA；200V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@9A

SD18C

Marking：D18C；Package：SOD-323；TVS ARRAY

350Wattspeakpulsepower(tp=8/20μs) Transientprotectionfordatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)24A(8/20μs) Smallpackageforuseinportableelectronics SuitablereplacementforMLV’sinESDprotect