首页 >D04G65C5>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
650VSiCthinQ!??Generation5diodes Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconCarbideSchottkyDiode FEATURES ·Highsurgecurrentcapability ·Noreverserecovery/Noforwardrecovery ·Benchmarkswitchingbehavior APPLICATIONS ·Solarinverter ·Powerfactorcorrection ·Switchmodepowersupply ·Uninterruptiblepowersupply | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
650VSiCthinQ!??Generation5diodes Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
650VSiCthinQ!??Generation5diodes Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconCarbideDiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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