HUN2140

PNPSiliconSurfaceMountTransistorswithMonolithicBiasResistorNetwork

IPP-2140

OUTLINECOUP

JFE2140

JFE2140Ultra-LowNoise,Matched,Dual,Low-GateCurrent,Discrete,Audio,N?멌hannelJFET

JFE2140

JFE2140Ultra-LowNoise,Matched,Dual,Low-GateCurrent,Discrete,Audio,N‑ChannelJFET

1Features •Ultra-lownoise: –Voltagenoise: •0.9nV/√Hzat1kHz,IDS=5mA •1.1nV/√Hzat1kHz,IDS=2mA –Currentnoise:1.6fA/√Hzat1kHz •LowVGSmismatch:4mV(max) •Lowgatecurrent:10pA(max) •Lowinputcapacitance:13pFatVDS=5V •Highgate-to-drainandgate-

JFE2140DR

JFE2140Ultra-LowNoise,Matched,Dual,Low-GateCurrent,Discrete,Audio,N?멌hannelJFET

JFE2140DR

JFE2140Ultra-LowNoise,Matched,Dual,Low-GateCurrent,Discrete,Audio,N‑ChannelJFET

1Features •Ultra-lownoise: –Voltagenoise: •0.9nV/√Hzat1kHz,IDS=5mA •1.1nV/√Hzat1kHz,IDS=2mA –Currentnoise:1.6fA/√Hzat1kHz •LowVGSmismatch:4mV(max) •Lowgatecurrent:10pA(max) •Lowinputcapacitance:13pFatVDS=5V •Highgate-to-drainandgate-

JFE2140DSGR

JFE2140Ultra-LowNoise,Matched,Dual,Low-GateCurrent,Discrete,Audio,N‑ChannelJFET

1Features •Ultra-lownoise: –Voltagenoise: •0.9nV/√Hzat1kHz,IDS=5mA •1.1nV/√Hzat1kHz,IDS=2mA –Currentnoise:1.6fA/√Hzat1kHz •LowVGSmismatch:4mV(max) •Lowgatecurrent:10pA(max) •Lowinputcapacitance:13pFatVDS=5V •Highgate-to-drainandgate-

JHV2140

HIGHVOLTAGERECTIFIERASSEMBLY

K2140

boxesandancillaryproducts

KA2140B

R/G/BVIDEOAMPLIFIERWITHOSDINTERFACEFORMONITORS

R/G/BVIDEOAMPLIFIER TheKA2140BisaveryhighfrequencyvideoamplifiersystemwithanOSDinterface,intendedtobeusedinmonitorwithhighresolutionupto1280´1024.Itcontains3matchedR/G/BvideoAmplifierswithBlanksignalandprovidesaflexibleinterfacingtoDCcontrolledadjus