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FDC653

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelenhancementmodepowerfieldeffecttransistorsisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessistailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuitedforlowvoltageapplic

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDC653N

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelenhancementmodepowerfieldeffecttransistorsisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessistailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuitedforlowvoltageapplic

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FXT653

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *100VoltVCEO *2Ampscontinuouscurrent *Lowsaturationvoltage *Ptot=1Watt

Zetex

Zetex Semiconductors

FZT653

NPNSILICONPLANARHIGHPERFORMANCETRANSISTOR

FEATURES *Lowsaturationvoltage

Zetex

Zetex Semiconductors

FZT653

SOT223NPNSILICONPLANARHIGHPERFORMANCETRANSISTOR

Features •BVCEO>100V •IC=3AHighContinuousCurrent •ICM=6APeakPulseCurrent •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

美台半导体

FZT653

NPNSiliconPlanarHighPerformanceTransistor

Features ●Lowsaturationvoltage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

FZT653

100VNPNHIGHPERFORMANCETRANSISTOR

DIODESDiodes Incorporated

美台半导体

FZT653Q

100VNPNHIGHPERFORMANCETRANSISTOR

Features •BVCEO>100V •IC=2AHighContinuousCurrent •ICM=6APeakPulseCurrent •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

美台半导体

FZT653QTA

100VNPNHIGHPERFORMANCETRANSISTOR

Features •BVCEO>100V •IC=2AHighContinuousCurrent •ICM=6APeakPulseCurrent •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

美台半导体

FZT653TA

100VNPNHIGHPERFORMANCETRANSISTOR

DIODESDiodes Incorporated

美台半导体

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