128K x 32 Synchronous-Pipelined RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The CY7C1340A/GVT71128C32 SRAM integrat

文件：225.46 Kbytes 页数：12 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous-Pipelined RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The CY7C1340A/GVT71128C32 SRAM integrat

文件：225.46 Kbytes 页数：12 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous-Pipelined RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The CY7C1340A/GVT71128C32 SRAM integrat

文件：225.46 Kbytes 页数：12 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 32 Synchronous-Pipelined RAM

Infineon

英飞凌